IRFD120
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
G
D
MIN
-
-
TYP
-
-
MAX
1.3
5.2
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 1.3A, V
GS
= 0V (Figure 12)
T
J
= 150
o
C, I
SD
= 1.3A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= 1.3A, dI
SD
/dt = 100A/µs
-
-
-
-
280
1.6
2.5
-
-
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. V
DD
= 25V, starting T
J
= 25
o
C, L = 32mH, R
G
= 25Ω, peak I
AS
= 1.3A.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
Unless Otherwise Specified
1.5
I
D,
DRAIN CURRENT (A)
0
25
125
50
75
100
o
C)
T
A
, AMBIENT TEMPERATURE (
150
1.2
0.9
0.6
0.4
0.6
0.2
0
0.3
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10
20
V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 9V
V
GS
= 8V
12
V
GS
= 7V
8
V
GS
= 6V
4
V
GS
= 5V
V
GS
= 4V
0
100
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
I
D
, DRAIN CURRENT (A)
1
100µs
1ms
10ms
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100ms
0.01
T
J
= MAX RATED
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
DC
0.1
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
I
D
, DRAIN CURRENT (A)
16
FIGURE 4. OUTPUT CHARACTERISTICS
4-277
INTERSIL [ INTERSIL CORPORATION ]
