IRFD220
Data Sheet
July 1999
File Number
2317.3
0.8A, 200V, 0.800 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09600.
Features
• 0.8A, 200V
• r
DS(ON)
= 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
IRFD220
PACKAGE
HEXDIP
BRAND
IRFD220
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
HEXDIP
DRAIN
GATE
SOURCE
4-287
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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©
Intersil Corporation 1999
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