IRFR110, IRFU110
Data Sheet
July 1999
File Number
3275.3
4.7A, 100V, 0.540 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These advanced
power MOSFETs are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Features
• 4.7A, 100V
• r
DS(ON)
= 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
IRFU110
IRFR110
PACKAGE
TO-251AA
TO-252AA
BRAND
IFU110
IFR110
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
4-371
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
