IRFR220, IRFU220
Data Sheet
July 1999
File Number
2410.2
4.6A, 200V, 0.800 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA9600.
Features
• 4.6A, 200V
• r
DS(ON)
= 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
IRFR220
IRFU220
PACKAGE
TO-252AA
TO-251AA
BRAND
IFR220
IFU220
Symbol
D
G
NOTE: When ordering, use the entire part number.
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
DRAIN
(FLANGE)
DRAIN
DRAIN (FLANGE)
SOURCE
4-389
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
