IRFR420, IRFU420
Data Sheet
July 1999
File Number
2411.3
2.5A, 500V, 3.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17405.
Features
• 2.5A, 500V
• r
DS(ON)
= 3.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
IRFR420
IRFU420
PACKAGE
TO-252AA
TO-251AA
BRAND
IRFR420
IRFU420
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e., IRFR4209A.
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN (FLANGE)
DRAIN
SOURCE
4-407
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
