Semiconductor
RFH25P08, RFH25P10,
RFK25P08, RFK25P10
-25A, -100V and -80V, 0.150 Ohm,
P-Channel Power MOSFETs
Description
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA49230.
BRAND
RFH25P08
RFH25P10
RFK25P08
RFK25P10
G
September 1998
Features
• -25A, -100V and -80V
• r
DS(ON)
= 0.150Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
[ /Title
(RFH25
P08,
RFH25P
10,
RFK25P
08,
RFK25P
10)
/Subject
(-25A, -
100V, -
80V,
0.150
Ohm, P-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words (-
25A, -
100V a-
80V,
0.150
Ohm, P-
Channel
Power
MOS-
FETs)
/Creator
()
/DOCIN
FO pdf-
mark
Ordering Information
PART NUMBER
RFH25P08
RFH25P10
RFK25P08
RFK25P10
PACKAGE
TO-218AC
TO-218AC
TO-204AE
TO-204AE
Symbol
D
NOTE: When ordering, use the entire part number.
S
Packaging
JEDEC TO -218AC
JEDEC TO-204AE
DRAIN
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1998
File Number
1632.1
6-1
INTERSIL [ INTERSIL CORPORATION ]
