IP Semiconductor Co., Ltd.
High sensitive triggering levels, the IPS608 series
SCRs is suitable for all applications, where the
available gate current is limited, such as
capacitive discharge ignitions, motor control in
kitchen aids, overvoltage crowbar protection in
low power supplies…
IPS608-xxD
1. Cathode
2. Anode
R
GK
3. Gate
MAIN FEATURES
Symbol
I
T(AV)
V
DRM
/ V
RRM
I
GT
DPAK(TO-252)
Value
8
600
≤ 100
Unit
A
V
uA
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Tj = 105℃
Tj = 105℃
Symbol
Tstg
Tj
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
Value
-40 to +150
-40 to +110
600
600
8
5
70
73
24.5
50
4
1
Unit
℃
V
A
A
RMS on–state current (180 conduction angle)
Average on-state current (180 conduction angle)
Non repetitive surge peak on–state Current (Tj = 25℃)
tp = 10ms
tp = 8.3ms
I²t Value for fusing
I
TSM
A
t
p = 10ms
I²t
dI/dt
I
GM
P
G(AV)
A²s
A/us
A
W
Critical rate of rise of on state current (I
G
= 2 X I
GT,
tr≤100ns,
f = 50Hz, Tj = 110℃
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125℃
Tj = 125℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1