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IPS608-05D 参数 Datasheet PDF下载

IPS608-05D图片预览
型号: IPS608-05D
PDF下载: 下载PDF文件 查看货源
内容描述: 高灵敏度触发水平 [High sensitive triggering levels]
分类和应用:
文件页数/大小: 5 页 / 285 K
品牌: IPS [ IP SEMICONDUCTOR CO., LTD. ]
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IP Semiconductor Co., Ltd.
High sensitive triggering levels, the IPS608 series
SCRs is suitable for all applications, where the
available gate current is limited, such as
capacitive discharge ignitions, motor control in
kitchen aids, overvoltage crowbar protection in
low power supplies…
IPS608-xxD
1. Cathode
2. Anode
R
GK
3. Gate
MAIN FEATURES
Symbol
I
T(AV)
V
DRM
/ V
RRM
I
GT
DPAK(TO-252)
Value
8
600
≤ 100
Unit
A
V
uA
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Tj = 105℃
Tj = 105℃
Symbol
Tstg
Tj
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
Value
-40 to +150
-40 to +110
600
600
8
5
70
73
24.5
50
4
1
Unit
V
A
A
RMS on–state current (180 conduction angle)
Average on-state current (180 conduction angle)
Non repetitive surge peak on–state Current (Tj = 25℃)
tp = 10ms
tp = 8.3ms
I²t Value for fusing
I
TSM
A
t
p = 10ms
I²t
dI/dt
I
GM
P
G(AV)
A²s
A/us
A
W
Critical rate of rise of on state current (I
G
= 2 X I
GT,
tr≤100ns,
f = 50Hz, Tj = 110℃
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125℃
Tj = 125℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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