IP Semiconductor Co., Ltd.
IPS820 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa technology
SIPOS and Glass passivation technology used has
reliable operation up to 125℃ junction temperature.
Low Igt parts available.
IPS820 series are suitable for general purpose
applications, a high gate sensitivity is required.
IPS820-xxF
MAIN FEATURES
Symbol
I
T(RMS)
I
T(AV)
V
DRM
/ V
RRM
V
TM
Value
20
12
800
≤ 1.6
Unit
A
A
V
V
TO-220F
ABSOLUTE MAXIMUM RATINGS
Parameter
RMS on–state current (Tc = 100℃, 180º conduction half sine wave)
Average on–state current
(Tc = 100℃, 180º conduction half sine wave)
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Tj = 25℃
Tj = 25℃
Symbol
I
T(RMS)
I
T(AV)
Tstg
Tj
V
DRM
V
RRM
V
DSM
V
RSM
I
TSM
I²t
dI/dt
I
GM
P
G(AV)
Value
20
12
-40 to +150
-40 to +125
800
800
900
900
200
200
50
5
1
Unit
A
A
℃
V
V
A
A²s
A/us
A
W
One cycle Non Repetitive surge current ( Half Cycle, 50Hz)
I²t Value for fusing
(t
p = 10ms, Half Cycle)
Critical rate of rise of turned – on current (I
G
= 2 X I
GT,
Tj = 125℃)
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125℃
Tj = 125℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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