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IPT04Q08-TED 参数 Datasheet PDF下载

IPT04Q08-TED图片预览
型号: IPT04Q08-TED
PDF下载: 下载PDF文件 查看货源
内容描述: 高的电流密度,由于增加一倍台面技术 [High current density due to double mesa technology]
分类和应用:
文件页数/大小: 5 页 / 211 K
品牌: IPS [ IP SEMICONDUCTOR CO., LTD. ]
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IP Semiconductor Co., Ltd.
High current density due to double mesa technology;
SIPOS and Glass Passivation. IPT04Q08-xx series are
suitable for general purpose AC Switching.
They can be used as an ON/OFF function In application
such as static relays, heating regulation, Induction
motor stating circuits… or for phase Control operation
light dimmers, motor speed Controllers.
IPT04Q08-xxD
DPAK(TO-252)
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/ V
RRM
I
GT
Value
4
800
5 to 25
Unit
A
V
mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
RMS on–state current
(Full sine wave)
Tj = 25℃
Tj = 25℃
Tc =105℃
f = 60Hz t = 16.7ms
f = 50 Hz t = 20ms
Symbol
Tstg
Tj
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
I
TSM
I²t
dI / dt
I
GM
P
G(AV)
Value
-40 to +150
-40 to +125
800
800
900
900
4
38
35
6
50
4
1
Unit
V
V
A
A
A²s
A/us
A
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
t
p = 10ms
Critical Rate of rise of on-state current
I
G
= 2xI
GT
,
t
r ≤ 100ns, f = 120Hz, Tj = 125
Peak gate current
Average gate power dissipation
t
p = 20us, Tj = 125
Tj = 125
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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