IPT0406-xxD
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
Symbol
I
GT
V
D
= 12V R
L
= 33Ω
V
GT
V
GD
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
℃
I
G =
1.2 I
GT
II
I
H
dV/dt
I
T
= 500mA
V
D
= 67% V
DRM
gate open Tj = 125
℃
(dV/dt) c=0.1V/us Tj = 125
℃
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
℃
Without snubber Tj = 125
℃
MIN
MAX
MIN
Test Condition
Quadrant
I – II – III
I – II – III
I – II – III
I – III
MAX
MAX
MIN
IPT0406-xxD
05
5
10
10
1.3
0.2
10
MAX
15
10
20
1.8
0.9
-
30
15
40
2.7
2.0
-
60
35
400
-
-
2.5
25
50
35
35
Unit
mA
V
V
I
L
mA
mA
V/us
A/ms
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 5.5A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 25
℃
Tj = 25
℃
Tj = 125
℃
Value (MAX)
1.6
5
1
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case (AC)
Value
2.6
Unit
℃/W
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