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IPT0406-10I 参数 Datasheet PDF下载

IPT0406-10I图片预览
型号: IPT0406-10I
PDF下载: 下载PDF文件 查看货源
内容描述: 高的电流密度,由于增加一倍台面技术 [High current density due to double mesa technology]
分类和应用:
文件页数/大小: 4 页 / 228 K
品牌: IPS [ IP SEMICONDUCTOR CO., LTD. ]
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IPT0406-xxI
ELECTRICAL CHARACTERISTICS
(Tj = 25
unless otherwise specified)
IPT0406-xxI
Symbol
I
GT
Test Condition
Quadrant
I – II – III
MAX
MAX
MIN
05
5
10
10
1.3
0.2
35
35
Unit
mA
V
V
V
D
= 12V R
L
= 33Ω
V
GT
V
GD
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
I
G =
1.2 I
GT
I – II – III
I – II – III
I – III
10
MAX
15
MAX
MIN
10
20
1.8
MIN
0.9
-
25
30
15
40
2.7
2.0
-
50
mA
60
35
400
-
-
2.5
A/ms
mA
V/us
I
L
I
H
dV/dt
II
I
T
= 500mA
V
D
= 67% V
DRM
gate open Tj = 125
(dV/dt) c=0.1V/us Tj = 125
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
Without snubber Tj = 125
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 5.5A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 25
Tj = 25
Tj = 125
Value (MAX)
1.6
5
1
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case (AC)
Value
2.6
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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