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IPT0808-SEA 参数 Datasheet PDF下载

IPT0808-SEA图片预览
型号: IPT0808-SEA
PDF下载: 下载PDF文件 查看货源
内容描述: 高的电流密度,由于增加一倍台面技术 [High current density due to double mesa technology]
分类和应用:
文件页数/大小: 4 页 / 201 K
品牌: IPS [ IP SEMICONDUCTOR CO., LTD. ]
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IPT0808-xxA
ELECTRICAL CHARACTERISTICS
(Tj = 25
unless otherwise specified)
IPT0808-xxA
Symbol
I
GT
Test Condition
Quadrant
I – II – III
MAX
MAX
MIN
SE
10
CE
35
1.3
0.2
BE
50
Unit
mA
V
V
V
D
= 12V R
L
= 33Ω
V
GT
V
GD
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
I
G =
1.2 I
GT
I – II – III
I – II – III
I – III
25
MAX
30
MAX
MIN
15
40
5.4
MIN
2.8
-
50
60
35
500
-
-
4.5
70
mA
80
50
1000
-
-
7.0
A/ms
mA
V/us
I
L
I
H
dV/dt
II
I
T
= 500mA
V
D
= 67% V
DRM
gate open Tj = 125
(dV/dt) c=0.1V/us Tj = 125
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
Without snubber Tj = 125
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 17A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 125
Tj = 125
Tj = 125
Value(MAX)
1.55
5
1
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case (AC)
Value
2.5
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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