IPT1208-xxF
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
IPT1208-xxF
TE
I
GT
V
D
= 12V R
L
= 30Ω
V
GT
V
GD
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
℃
I
G =
1.2 I
GT
II
I
H
dV/dt
I
T =
100mA
V
D
= 67% V
DRM
gate open Tj = 125
℃
(dV/dt) c=0.1V/us Tj = 125
℃
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
℃
Without snubber Tj = 125
℃
MIN
MAX
MIN
I – II – III
I – II – III
I – II – III
I – III
I
L
MAX
15
10
20
3.5
1.0
-
30
15
40
6.5
2.9
-
60
35
500
-
-
6.5
80
50
1000
-
-
12
A/ms
mA
V/us
MAX
MAX
MIN
10
25
5
SE
10
1.3
0.2
50
70
mA
CE
35
BE
50
mA
V
V
Symbol
Test Condition
Quadrant
Unit
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 17A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 125
℃
Tj = 125
℃
Tj = 125
℃
Value(MAX)
1.55
5
1
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case(AC)
Value
3.3
Unit
℃/W
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