Data Sheet No.PD60203
IPS022G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
•
•
•
•
•
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Product Summary
R
ds(on)
V
clamp
I
shutdown
T
on
/T
off
Package
150m
Ω
(max)
50V
5A
1.5µs
Description
The IPS022G are fully protected dual low side SMART
POWER MOSFETs respectively. They feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET® POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
OFF the power MOSFET when the temperature ex-
ceeds 165
o
C or when the drain current reaches 5A.
These devices restart once the input is cycled. The
avalanche capability is significantly enhanced by
the active clamp and covers most inductive load
demagnetizations.
8-Lead SOIC
IPS022G
(Dual)
Typical Connection
Load
R in series
(if needed)
Q
D
IN
control
S
S
Logic signal
(Refer to lead assignment for correct pin configuration)
www.irf.com
1
IRF [ INTERNATIONAL RECTIFIER ]
