IPS521G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25
o
C unless otherwise specified).
Symbol Parameter
Vout
Voffset
Vin
Iin, max
Vdg
Idg, max
Isd
cont.
Maximum output voltage
Maximum Input voltage
Maximum positive IN current
Maximum diagnostic output voltage
Maximum diagnostic output current
Diode max. permanent current
(1)
(rth = 125
o
C/W)
Isd
pulsed
Diode max. pulsed current
(1)
ESD1
Electrostatic discharge voltage
(Human Body)
ESD2
Pd
Tj max.
Vcc max.
Electrostatic discharge voltage
(Machine Model)
Maximum power dissipation
(1)
(rth=125
o
C/W)
Max. storage & operating junction temp.
Maximum Vcc voltage
Min.
Vcc-50
-0.3
-5
-0.3
-1
—
—
—
—
—
-40
—
Max.
Vcc+0.3
Vcc+0.3
5.5
10
5.5
10
1.4
10
4
0.5
1
+150
50
Units
V
Test Conditions
Maximum logic ground to load ground offset Vcc-50
mA
V
mA
A
C=100pF, R=1500Ω,
kV
C=200pF, R=0Ω, L=10µH
W
o
C
V
Thermal Characteristics
Symbol Parameter
Rth1
Rth2
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
Min.
—
—
Typ.
&
Max. Units Test Conditions
a
a
o
C/W 8 Lead SOIC
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Vcc
VIH
VIL
Iout
Tc=85
o
C
Rin
Rdg
Continuous Vcc voltage
High level input voltage
Low level input voltage
Continuous output current
(TAmbient = 85
o
C, Tj = 125
o
C, Rth = 100
o
C/W)
Recommended resistor in series with IN pin
Recommended resistor in series with DG pin
Min.
5.5
4
-0.3
—
4
10
Max.
35
5.5
0.9
1.6
6
20
Units
V
A
k
Ω
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
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