Data Sheet No. PD60201 Rev.D
IR2301(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features
•
Floating channel designed for bootstrap operation
•
•
•
•
•
•
•
•
Fully operational to +600V
Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 5 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs
Also available LEAD-FREE (PbF)
Packages
8 Lead PDIP
IR2301
8 Lead SOIC
IR2301S
Description
2106/2301//2108//2109/2302/2304 Feature Comparison
The IR2301(S) are high voltage, high speed
Cross-
Input
conduction
power MOSFET and IGBT drivers with indepen-
Dead-Time
Ground Pins
Part
prevention
logic
dent high and low side referenced output
logic
2106/2301
channels. Proprietary HVIC and latch immune
COM
HIN/LIN
no
none
21064
VSS/COM
CMOS technologies enable ruggedized mono-
2108
Internal 540ns
COM
HIN/LIN
yes
lithic construction. The logic input is compatible
Programmable 0.54~5
µs
21084
VSS/COM
with standard CMOS or LSTTL output, down to
2109/2302
Internal 540ns
COM
IN/SD
yes
3.3V logic. The output drivers feature a high
Programmable 0.54~5
µs
21094
VSS/COM
pulse current buffer stage designed for minimum
yes
Internal 100ns
HIN/LIN
COM
2304
driver cross-conduction. The floating channel
can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to
600 volts.
Typical Connection
up to 600V
(Refer to Lead
Assignments for
correct pin con-
figuration). This/
T h e s e
diagram(s)
show electrical
connections
only. Please re-
fer to our Appli-
cation Notes
and DesignTips
for proper circuit
board layout.
V
CC
V
CC
HIN
LIN
V
B
HO
V
S
LO
TO
LOAD
HIN
LIN
COM
IR2301
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