Data Sheet No. PD60026-R
IR2112(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features
•
Floating channel designed for bootstrap operation
•
Fully operational to +600V
•
Tolerant to negative transient voltage
•
•
•
•
•
•
•
•
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
600V max.
200 mA / 420 mA
10 - 20V
125 & 105 ns
30 ns
Packages
Description
The IR2112(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
16-Lead SOIC
(wide body)
14-Lead PDIP
and latch immune CMOS technologies enable rugge-
dized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs, down
to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-
conduction. Propagation delays are matched to simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 600 volts.
Typical Connection
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
up to 600V
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1
IRF [ INTERNATIONAL RECTIFIER ]
