Data Sheet No. PD60019
Rev.P
IR2130/IR2132(J)(S) & (PbF)
3-PHASE BRIDGE DRIVER
Features
•
Floating channel designed for bootstrap operation
•
•
•
•
•
•
•
•
•
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for all channels
Over-current shutdown turns off all six drivers
Independent half-bridge drivers
Matched propagation delay for all channels
2.5V logic compatible
Outputs out of phase with inputs
Cross-conduction prevention logic
Also available LEAD-FREE
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Deadtime (typ.)
600V max.
200 mA / 420 mA
10 - 20V
675 & 425 ns
2.5 µs (IR2130)
0.8 µs (IR2132)
Description
Packages
The IR2130/IR2132(J)(S) is a high voltage, high speed
power MOSFET and IGBT driver with three indepen-
dent high and low side referenced output channels. Pro-
prietary HVIC technology enables ruggedized
28-Lead SOIC
monolithic construction. Logic inputs are compatible with
CMOS or LSTTL outputs, down to 2.5V logic. A
28-Lead PDIP
ground-referenced operational amplifier provides
analog feedback of bridge current via an external cur-
rent sense resistor. A current trip function which termi-
44-Lead PLCC w/o 12 Leads
nates all six outputs is also derived from this resistor.
An open drain
FAULT
signal indicates if an over-cur-
rent or undervoltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed
for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The
floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration
which operate up to 600 volts.
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer
to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1