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IRF1010N 参数 Datasheet PDF下载

IRF1010N图片预览
型号: IRF1010N
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET ( VDSS = 55V , RDS(ON) = 11mohm ,ID = 85A ) [Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 8 页 / 212 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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PD - 91278
IRF1010N
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 55V
R
DS(on)
= 11mΩ
G
S
I
D
= 85A‡
Description
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
85
‡
60
290
180
1.2
± 20
43
18
3.6
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.85
–––
62
Units
°C/W
www.irf.com
1
3/16/01