PD - 94282A
IRF1902
HEXFET
®
Power MOSFET
l
l
l
l
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
V
DSS
20V
R
DS(on)
max (mΩ)
Ω)
85@V
GS
= 4.5V
170@V
GS
= 2.7V
I
D
4.0A
3.2A
These N-Channel
HEXFET
power MOSFET
s from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
4.2
3.4
17
2.5
1.6
0.02
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
1
11/15/01
IRF [ INTERNATIONAL RECTIFIER ]
