IRF3703
14000
12000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 76A
16
V
DS
= 24V
C, Capacitance (pF)
10000
8000
6000
C
iss
12
C
oss
4000
2000
8
4
C
rss
0
1
10
100
0
0
40
80
120
FOR TEST CIRCUIT
SEE FIGURE 13
160
200
240
280
320
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 175
°
C
I
D
, Drain Current (A)
100
1000
10us
10
T
J
= 25
°
C
1
100us
100
1ms
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
10
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF [ INTERNATIONAL RECTIFIER ]
