IRF3710
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
100
–––
–––
2.0
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
23
mΩ V
GS
= 10V, I
D
=28A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 28A
25
V
DS
= 100V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
130
I
D
= 28A
26
nC
V
DS
= 80V
43
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 50V
–––
I
D
= 28A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
3130 –––
V
GS
= 0V
410 –––
V
DS
= 25V
72 –––
pF
ƒ = 1.0MHz, See Fig. 5
1060
280 mJ I
AS
= 28A, L = 0.70mH
Typ.
–––
0.13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
58
45
47
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
57
––– –––
showing the
A
G
integral reverse
––– ––– 230
S
p-n junction diode.
––– ––– 1.2
V
T
J
= 25°C, I
S
= 28A, V
GS
= 0V
––– 140 220
ns
T
J
= 25°C, I
F
= 28A
––– 670 1010 nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
≤
28A, di/dt
≤
380A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Starting T
J
= 25°C, L = 0.70mH
Pulse width
≤
400µs; duty cycle
≤
2%.
R
G
= 25Ω, I
AS
= 28A, V
GS
=10V (See Figure 12)
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
2
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