IRF3710
100000
12
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
I
D
=
28A
10
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
10000
C, Capacitance(pF)
Ciss
1000
V
GS
, Gate-to-Source Voltage (V)
7
Coss
5
100
Crss
2
10
1
10
100
0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
10.00
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
100µsec
10
1msec
1.00
T J = 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
VSD , Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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