PD - 97034
IRF4905SPbF
IRF4905LPbF
Features
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters Are Differrent from
IRF4905S
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
= -55V
R
DS(on)
= 20mΩ
G
S
I
D
= -42A
D
Description
Features of this design are a 150°C junction oper-
ating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
D
G
D
S
G
D
S
D
2
Pak
IRF4905SPbF
G
D
TO-262
IRF4905LPbF
S
Absolute Maximum Ratings
Parameter
Gate
Drain
Max.
-70
-44
-42
-280
170
1.3
± 20
Source
Units
A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
d
Single Pulse Avalanche Energy Tested Value
Ã
h
140
790
See Fig.12a, 12b, 15, 16
-55 to + 150
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
i
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
y
y
j
Parameter
Typ.
Max.
0.75
40
Units
Junction-to-Ambient (PCB Mount, steady state)
ij
–––
–––
www.irf.com
1
8/5/05
IRF [ INTERNATIONAL RECTIFIER ]
