IRF6216
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
-150
–––
–––
-3.0
–––
–––
–––
–––
Typ.
–––
-0.17
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.240
Ω
V
GS
= -10V, I
D
= -1.3A
-5.0
V
V
DS
= V
GS
, I
D
= -250µA
-25
V
DS
= -150V, V
GS
= 0V
µA
-250
V
DS
= -120V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
33
7.2
15
18
15
33
26
1280
220
53
1290
99
220
Max. Units
Conditions
–––
S
V
DS
= -50V, I
D
= -1.3A
49
I
D
= -1.3A
11
nC
V
DS
= -120V
23
V
GS
= -10V,
–––
V
DD
= -75V
–––
I
D
= -1.3A
ns
–––
R
G
= 6.5Ω
–––
V
GS
= -10V
–––
V
GS
= 0V
–––
V
DS
= -25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= -1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= -120V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to -120V
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
200
-4.0
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
80
310
-2.2
A
-19
-1.6
120
460
V
nS
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.3A
di/dt = -100A/µs
D
S
2
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