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IRF7103Q 参数 Datasheet PDF下载

IRF7103Q图片预览
型号: IRF7103Q
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET ( VDSS = 50V ) [Power MOSFET(Vdss=50V)]
分类和应用: 晶体小信号场效应晶体管开关脉冲光电二极管
文件页数/大小: 10 页 / 170 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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IRF7103Q
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
50
–––
–––
–––
1.0
3.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.057
–––
–––
–––
–––
–––
–––
–––
–––
10
1.2
2.8
5.1
1.7
15
2.3
255
69
29
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
130
V
GS
= 10V, I
D
= 3.0A
R
mΩ
200
V
GS
= 4.5V, I
D
= 1.5A
R
3.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 15V, I
D
= 3.0A
2.0
V
DS
= 40V, V
GS
= 0V
µA
25
V
DS
= 40V, V
GS
= 0V, T
J
= 55°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
15
I
D
= 2.0A
–––
nC V
DS
= 40V
–––
V
GS
= 10V
–––
V
DD
= 25V
R
–––
I
D
= 1.0A
ns
–––
R
G
= 6.0Ω
–––
R
D
= 25Ω
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
35
45
3.0
A
12
1.2
53
67
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.5A, V
GS
= 0VR
T
J
= 25°C, I
F
= 1.5A
di/dt = 100A/µs
R
D
S
Notes:
Q
Repetitive rating; pulse width limited by
max. junction temperature.
R
Pulse width
400µs; duty cycle
2%.
S
Surface mounted on 1 in square Cu board
T
Starting T
J
= 25°C, L = 4.9mH
R
G
= 25Ω, I
AS
= 3.0A. (See Figure 12).
U
I
SD
2.0A, di/dt
155A/µs, V
DD
V
(BR)DSS
,
T
J
175°C
V
Limited by T
Jmax
, see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
2
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