PD - 9.1095B
IRF7103
HEXFET
®
Power MOSFET
l
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Adavanced Process Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
S1
G1
S2
G2
1
8
D1
D1
D2
D2
2
7
V
DSS
= 50V
R
DS(on)
= 0.130Ω
I
D
= 3.0A
3
6
4
5
Top View
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
3.0
2.3
10
2.0
0.016
± 20
4.5
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
8/25/97
IRF [ INTERNATIONAL RECTIFIER ]
