欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRF7104 参数 Datasheet PDF下载

IRF7104图片预览
型号: IRF7104
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET功率MOSFET [HEXFET Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 9 页 / 160 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
 浏览型号IRF7104的Datasheet PDF文件第2页浏览型号IRF7104的Datasheet PDF文件第3页浏览型号IRF7104的Datasheet PDF文件第4页浏览型号IRF7104的Datasheet PDF文件第5页浏览型号IRF7104的Datasheet PDF文件第6页浏览型号IRF7104的Datasheet PDF文件第7页浏览型号IRF7104的Datasheet PDF文件第8页浏览型号IRF7104的Datasheet PDF文件第9页  
PD - 9.1096B
IRF7104
HEXFET
®
Power MOSFET
Adavanced Process Technology
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
Description
l
S1
G1
S2
G2
1
8
7
D1
D1
D2
D2
2
V
DSS
= -20V
R
DS(on)
= 0.250Ω
I
D
= -2.3A
3
4
6
5
Top View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
‚
Junction and Storage Temperature Range
Max.
-2.3
-1.8
-10
2.0
0.016
± 12
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
„
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
8/25/97