PD - 91879A
IRF7207
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Generation 5 Technology
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
S
1
8
7
A
D
D
D
D
S
S
G
2
V
DSS
= -20V
3
6
4
5
R
DS(on)
= 0.06Ω
Description
Fifth Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
T op V ie w
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
V
GS
V
GSM
E
AS
dv/dt
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-20
-5.4
-4.3
-43
2.5
1.6
0.02
± 12
-16
140
-5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
–––
Max.
50
Units
°C/W
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IRF [ INTERNATIONAL RECTIFIER ]
