PD - 9.1243B
PRELIMINARY
IRF7309
N-CHANNEL MOSFET
1
8
HEXFET
®
Power MOSFET
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
S1
G1
S2
G2
D1
D1
N-Ch
V
DSS
30V
P-Ch
-30V
2
7
3
6
D2
D2
4
5
P-CHANNEL MOSFET
R
DS(on)
0.050
Ω
0.10
Ω
Top View
SO-8
Absolute Maximum Ratings
Parameter
N-Channel
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
10 Sec. Pulse Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
4.7
4.0
3.2
16
1.4
0.011
± 20
6.9
-55 to + 150
-6.0
Max.
P-Channel
-3.5
-3.0
-2.4
-12
Units
A
A
A
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θ
JA
Junction-to-Amb. (PCB Mount, steady state)**
Min.
––––
Typ.
––––
Max.
90
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
147
IRF [ INTERNATIONAL RECTIFIER ]
