PD - 9.1606A
PRELIMINARY
l
l
l
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IRF7319
HEXFET
®
Power MOSFET
D1
D1
D2
D2
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
S1
G1
S2
G2
N -C H A N N E L M O S F E T
1
8
N-Ch
V
DSS
30V
P-Ch
-30V
2
7
3
6
4
5
P -C H A N N E L M O S FE T
R
DS(on)
0.029Ω 0.058Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Top View
S O -8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
82
4.0
0.20
5.0
-5.0
-55 to + 150 °C
N-Channel
30
6.5
5.2
30
2.5
2.0
1.3
140
-2.8
Maximum
P-Channel
-30
± 20
-4.9
-3.9
-30
-2.5
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W
mJ
A
mJ
V/ ns
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
R
θJA
Limit
62.5
Units
°C/W
9/15/97
IRF [ INTERNATIONAL RECTIFIER ]
