PD -94000
IRF7328
HEXFET
®
Power MOSFET
q
q
q
q
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Available in Tape & Reel
V
DSS
-30V
R
DS(on)
max
21mΩ@V
GS
= -10V
32mΩ@V
GS
= -4.5V
I
D
-8.0A
-6.8A
Description
New trench HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
S1
G1
S2
G2
1
8
D1
D1
D2
D2
2
7
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-8.0
-6.4
-32
2.0
1.3
16
± 20
-55 to + 150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
www.irf.com
1
10/04/00
IRF [ INTERNATIONAL RECTIFIER ]
