PD - 94420
IRF7380
HEXFET
®
Power MOSFET
Applications
High frequency DC-DC converters
V
DSS
80V
R
DS(on)
max
73m
Ω
@V
GS
= 10V
I
D
3.6A
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
S1
G1
S2
G2
1
8
D1
D1
D2
D2
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 100°C
I
DM
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
80
± 20
3.6
2.9
29
2.0
0.02
2.3
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount) *
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
www.irf.com
1
08/28/02
IRF [ INTERNATIONAL RECTIFIER ]
