IRF7404
3000
-V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
is s
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1M H z
C
g s
+ C
g d
, C
d s
S H O R T E D
C
gd
C
d s
+ C
gd
10
I
D
= -3 .2 A
V
D S
= -1 6V
8
C , Capacitance (pF)
2000
C
iss
6
C
o ss
4
1000
C
rss
2
0
1
10
100
A
0
0
10
20
30
FO R TE S T C IR C U IT
S E E FIG U R E 1 2
40
50
60
A
-V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
S D
, R everse Drain C urrent (A )
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 1 5 0°C
10
T
J
= 2 5°C
-I
D
, Drain Current (A)
I
10
1ms
1
10ms
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
G S
= 0V
1.4
1.6
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
S D
, S ource-to-D rain V oltage (V )
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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