PD- 93842B
SMPS MOSFET
Applications
l
High Frequency DC-DC Converters
with Synchronous Rectification
IRF7455
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max
0.0075Ω
I
D
15A
Benefits
l
Ultra-Low R
DS(on)
at 4.5V V
GS
l
Low Charge and Low Gate Impedance to
Reduce Switching Losses
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
7
A
A
D
D
D
D
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 12
15
12
120
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
Typical SMPS Topologies
l
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
1
4/20/00
Notes
through
are on page 8
www.irf.com
IRF [ INTERNATIONAL RECTIFIER ]
