PD- 93843A
SMPS MOSFET
IRF7463
HEXFET
®
Power MOSFET
Applications
l
High Frequency DC-DC Converters
with Synchronous Rectification
V
DSS
30V
R
DS(on)
max
0.008Ω
I
D
14A
Benefits
l
Ultra-Low R
DS(on)
at 4.5V V
GS
l
Low Charge and Low Gate Impedance to
Reduce Switching Losses
l
Fully Characterized Avalanche Voltage
and Current
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
14
11
110
2.5
1.6
0.02
± 12
-55 to + 150
Units
A
W
W/°C
V
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
Typical SMPS Topologies
l
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes
through
are on page 7
www.irf.com
1
3/30/00
IRF [ INTERNATIONAL RECTIFIER ]
