PD – 91746C
IRF7805/IRF7805A
HEXFET
®
Chip-Set for DC-DC Converters
•
•
•
•
N Channel Application Specific MOSFETs
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
S
S
S
G
1
8
7
A
D
D
D
D
2
3
6
Description
These new devices employ advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make them
ideal for high efficiency DC-DC Converters that power
the latest generation of mobile microprocessors.
The IRF7805/IRF7805A offers maximum efficiency for
mobile CPU core DC-DC converters.
4
5
SO-8
T o p V ie w
Device Features
IRF7805 IRF7805A
Vds
30V
30V
Rds(on)
11mΩ
11mΩ
Qg
31nC
31nC
Qsw
11.5nC
Qoss
36nC
36nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
T
J
, T
STG
I
S
I
SM
2.5
106
25°C
70°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
13
10
100
2.5
1.6
–55 to 150
2.5
106
°C
A
IRF7805
30
±12
13
10
100
W
A
IRF7805A
Units
V
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
R
θJA
Max.
50
Units
°C/W
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10/10/00