PD-94108
IRF7807V
•
•
•
•
N Channel Application Specific MOSFET
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
S
S
S
G
1
8
7
A
D
D
D
D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
2
3
6
4
5
SO-8
T o p V ie w
DEVICE CHARACTERISTICS
IRF7807V
R
DS
(on)
Q
G
Q
sw
Q
oss
17mΩ
9.5nC
3.4nC
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
T
A
= 25°C
T
A
= 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
R
θJA
R
θJL
Max.
50
20
Units
°C/W
°C/W
T
J
, T
STG
I
S
I
SM
T
A
= 25°C
T
A
= 70°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
IRF7807 V
30
±20
8.3
6.6
66
2.5
1.6
–55 to 150
2.5
66
°C
A
W
A
Units
V
3/1/01
IRF [ INTERNATIONAL RECTIFIER ]
