PD - 95505
Applications
l
High frequency DC-DC converters
l
UPS and Motor Control
l
Lead-Free
SMPS MOSFET
IRF8010PbF
HEXFET
®
Power MOSFET
V
DSS
100V
R
DS(on)
max
15mΩ
I
D
80A
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
l
Typical R
DS(on)
= 12mΩ
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Max.
80
57
320
260
1.8
± 20
h
Units
A
W
W/°C
V
V/ns
°C
c
e
16
-55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
1.1(10)
N•m (lbf•in)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.57
–––
62
Units
°C/W
Notes
through
are on page 8
www.irf.com
1
07/06/04
IRF [ INTERNATIONAL RECTIFIER ]
