PD - 9.917A
HEXFET
®
Power MOSFET
l
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IRF9540S
D
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
P Channel
175°C Operating Temperature
Fast Switching
V
DSS
= -100V
G
S
R
DS(on)
= 0.20Ω
I
D
= -19A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220 is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-19
-13
-72
150
3.7
1.0
0.025
±20
640
-19
15
-5.5
-55 to + 175
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Min.
Typ.
Max.
1.0
40
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
3/21/03
IRF [ INTERNATIONAL RECTIFIER ]
