PD - 95535
SMPS MOSFET
IRFB23N15DPbF
IRFS23N15DPbF
IRFSL23N15DPbF
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
V
DSS
150V
R
DS(on)
max
0.090Ω
I
D
23A
Lead-Free
Benefits
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Low Gate-to-Drain Charge to Reduce
Switching Losses
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Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
TO-220AB
l
Fully Characterized Avalanche Voltage
IRFB23N15D
and Current
D
2
Pak
IRFS23N15D
TO-262
IRFSL23N15D
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
23
17
92
3.8
136
0.9
± 30
4.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l
Telecom 48V input DC-DC Active Clamp Reset Forward Converter
www.irf.com
Notes
through
are on page 11
1
7/20/04
IRF [ INTERNATIONAL RECTIFIER ]
