PD - 94946
SMPS
MOSFET
Applications
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High Frequency DC-DC converters
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Lead-Free
IRFB31N20DPbF
IRFS31N20DPbF
IRFSL31N20DPbF
HEXFET
®
Power MOSFET
V
DSS
200V
R
DS(on)
max
0.082Ω
I
D
31A
Benefits
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Low Gate to Drain to Reduce Switching
Losses
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Fully Characterized Capacitance Including
Effective COSS to Simplify Design,(See
AN 1001)
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Fully Characterized Avalanche Voltage
and Current
TO-262
TO-220AB
D
2
Pak
IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
31
21
124
3.1
200
1.3
± 30
2.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies
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Telecom 48V Input DC/DC Active Clamp Reset Forward Converter
Notes
through
are on page 11
www.irf.com
1
3/1/04