PROVISIONAL
PD - 97001A
SMPS MOSFET
Applications
l
High frequency DC-DC converters
l
Plasma Display Panel
l
Lead-Free
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET
®
Power MOSFET
Key Parameters
V
DS
V
DS (Avalanche)
min.
R
DS(ON)
max @ 10V
T
J
max
200
260
54
175
V
V
m
:
°C
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
TO-220AB
IRFB38N20DPbF
D
2
Pak
IRFS38N20DPbF
TO-262
IRFSL38N20DPbF
Max.
38*
27*
180
3.8
230*
1.5*
± 30
9.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes
through
are on page 11
www.irf.com
1
09/09/05
IRF [ INTERNATIONAL RECTIFIER ]
