PD - 14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
G
HEXFET
®
Power MOSFET
D
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
S
V
DSS
R
DS(on)
typ.
max.
I
D
100V
5.6m
:
7.0m
:
130A
S
D
G
TO-220AB
IRFB4310PbF
S
D
G
D
2
Pak
IRFS4310PbF
S
D
G
TO-262
IRFSL4310PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dV/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
130
d
92
550
300
2.0
± 20
14
Units
A
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
V/ns
°C
f
-55 to + 175
300
10lb in (1.1N m)
x
x
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Ã
e
980
See Fig. 14, 15, 22a, 22b,
mJ
A
mJ
Repetitive Avalanche Energy
g
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
k
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
k
Junction-to-Ambient (PCB Mount) , D Pak
2
jk
www.irf.com
1
01/31/06