PROVISIONAL
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.16
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
32
mΩ V
GS
= 10V, I
D
= 36A
5.0
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 150V, V
GS
= 0V
µA
250
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
60
18
28
16
47
28
25
2770
590
110
3940
260
550
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 36A
89
I
D
= 36A
27
nC V
DS
= 75V
42
V
GS
= 10V,
–––
V
DD
= 75V
–––
I
D
= 36A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 120V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
V
DS (Avalanche)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Voltage
Repetitive Avalanche Energy
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Ã
dh
Min.
–––
–––
–––
200
Min. Typ. Max. Units
Typ.
–––
–––
450
–––
Max.
470
36
–––
–––
Units
mJ
A
mJ
V
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
60
––– –––
showing the
A
G
integral reverse
––– ––– 240
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 36A, V
GS
= 0V
––– 140 210
nS
T
J
= 25°C, I
F
= 36A
––– 780 1170 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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