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IRFL014N 参数 Datasheet PDF下载

IRFL014N图片预览
型号: IRFL014N
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET ( VDSS = 55V , RDS(ON) = 0.16ohm ,ID = 1.9A ) [Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)]
分类和应用: 晶体小信号场效应晶体管
文件页数/大小: 8 页 / 146 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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PD- 92003A
HEXFET
®
Power MOSFET
l
l
l
l
l
l
IRFL014N
V
DSS
= 55V
R
DS(on)
= 0.16Ω
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
D
G
S
I
D
= 1.9A
Description
Fifth Generation HEXFET
®
MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET
®
power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V**
Continuous Drain Current, V
GS
@ 10V*
Continuous Drain Current, V
GS
@ 10V*
Pulsed Drain Current

Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
ƒ
Junction and Storage Temperature Range
Max.
2.7
1.9
1.5
15
2.1
1.0
8.3
± 20
48
1.7
0.1
5.0
-55 to + 150
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJA
R
θJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90
50
Max.
120
60
Units
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
1
1/19/00