欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRFP22N50APBF 参数 Datasheet PDF下载

IRFP22N50APBF图片预览
型号: IRFP22N50APBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET功率MOSFET ( VDSS = 500V , RDS ( ON)最大值= 0.23ヘ, ID = 22A ) [HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.23ヘ , ID = 22A )]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 8 页 / 192 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
 浏览型号IRFP22N50APBF的Datasheet PDF文件第2页浏览型号IRFP22N50APBF的Datasheet PDF文件第3页浏览型号IRFP22N50APBF的Datasheet PDF文件第4页浏览型号IRFP22N50APBF的Datasheet PDF文件第5页浏览型号IRFP22N50APBF的Datasheet PDF文件第6页浏览型号IRFP22N50APBF的Datasheet PDF文件第7页浏览型号IRFP22N50APBF的Datasheet PDF文件第8页  
PD - 95004
SMPS
MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
UninterruptIble Power Supply
l
High Speed Power Switching
l
Lead-Free
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
IRFP22N50APbF
HEXFET
®
Power MOSFET
V
DSS
500V
R
DS(on)
max
0.23Ω
I
D
22A
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
22
14
88
277
2.2
± 30
4.8
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l
l
Full Bridge Converters
Power Factor Correction Boost
Notes

www.irf.com
through
…
are on page 8
1
2/11/04