PD -97134
IRFP4468PbF
HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
G
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
D
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
100V
2.0m
:
2.6m
:
290A
c
195A
S
G
D
S
TO-247AC
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
290c
200
195
1120
520
3.4
± 20
10
-55 to + 175
300
10lbxin (1.1Nxm)
740
See Fig. 14, 15, 22a, 22b,
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
e
Avalanche Current
d
Repetitive Avalanche Energy
g
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Junction-to-Case
k
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
jk
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
°C/W
www.irf.com
1
5/21/08
IRF [ INTERNATIONAL RECTIFIER ]
