IRFP450LC
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
500
–––
–––
2.0
8.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.40
Ω
V
GS
= 10V, I
D
= 8.4A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 8.4A
25
V
DS
= 500V, V
GS
= 0V
µA
250
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
74
I
D
= 14A
19
nC
V
DS
= 400V
35
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 250V
–––
I
D
= 14A
ns
–––
R
G
= 6.2Ω
–––
R
D
= 17Ω, See Fig. 10
Between lead,
––– 5.0 –––
6mm (0.25in.)
nH
from package
––– 13
–––
and center of die contact
––– 2200 –––
V
GS
= 0V
––– 320 –––
pF
V
DS
= 25V
––– 28 –––
ƒ = 1.0MHz, See Fig. 5
Typ.
–––
0.59
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
49
30
30
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
580
5.1
14
A
56
1.4
870
7.7
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
T
J
= 25°C, I
F
= 14A
di/dt = 100A/µs
S
+L
D
)
Intrinsic turn-on time is negligible (turn-on is dominated by L
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
14A, di/dt
≤
130A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
V
DD
= 25V, starting T
J
= 25°C, L = 7.0mH
R
G
= 25Ω, I
AS
= 14A. (See Figure 12)
IRF [ INTERNATIONAL RECTIFIER ]
