PD - 9.1232
IRFP460LC
HEXFET
®
Power MOSFET
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
gs
Rating
Reduced C
iss
, C
oss
, C
rss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
V
DSS
= 500V
R
DS(on)
= 0.27
Ω
I
D
= 20A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
20
12
80
280
2.2
±30
960
20
28
3.5
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
Typ.
––––
0.24
––––
Max.
0.45
––––
––––
Units
°C/W
40
Revision 0
IRF [ INTERNATIONAL RECTIFIER ]
